july 2015 fdms9409_f085 n-channel powertrench ? mosfet ?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 www.fairchildsemi.com 1 fdms9409_f085 n-channel powertrench ? mosfet 40 v, 65 a, 3.2 m features ? typical r ds(on) = 2.4 m at v gs = 10v, i d = 65 a ? typical q g(tot) = 41 nc at v gs = 10v, i d = 65 a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter/alternator ? distributed power architectures and vrm ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted. symbol parameter ratings units v dss drain-to-source voltage 40 v v gs gate-to-source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 65 a pulsed drain current t c = 25c see figure 4 e as single pulse avalanche energy (note 2) 100 mj p d power dissipation 100 w derate above 25 o c0.67w/ o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance, junction to case 1.5 o c/w r ja maximum thermal resistance, junction to ambient (note 3) 50 o c/w package marking and ordering information device marking device package reel size tape width quantity fdms9409 fdms9409_f085 power56 13? 12mm 3000units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 0.1mh, i as = 45a, v dd = 40v during inductor charging and v dd = 0v during time in avalanche. 3: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design, while r ja is determined by the board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. for ? current ? package ? drawing, ? please ? refer ? to ? the ? fairchild ? web \ site ? at ? https://www.fairchildsemi.com/package \ drawings/pq/ pqfn08m.pdf
fdms9409_f085 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 electrical characteristics t j = 25c unless otherwise noted. off characteristics on characteristics dynamic characteristics symbol parameter test conditions min. typ. max. units b vdss drain-to-source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss drain-to-source leakage current v ds = 4 0 v , t j = 25 o c --1 a v gs = 0v t j = 175 o c (note 4) - - 1 ma i gss gate-to-source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 3.0 4.0 v r ds(on) drain to source on resistance i d = 65a, v gs = 10v t j = 25 o c -2.43.2m t j = 175 o c (note 4) - 4.3 5.6 m c iss input capacitance v ds = 20v, v gs = 0v, f = 1mhz - 3130 - pf c oss output capacitance - 1100 - pf c rss reverse transfer capacitance - 47 - pf r g gate resistance f = 1mhz - 2.0 - q g(tot) total gate charge v gs = 0 to 10v v dd = 32v i d = 65a -4162nc q g(th) threshold gate charge v gs = 0 to 2v - 5.7 - nc q gs gate-to-source gate charge - 14.4 - nc q gd gate-to-drain ?miller? charge - 6.8 - nc switching characteristics drain-source diode characteristics note: 4: the maximum value is specified by design at t j = 175c. product is not tested to this condition in production. t on turn-on time v dd = 20v, i d = 65a, v gs = 10v, r gen = 6 - - 34 ns t d(on) turn-on delay - 16 - ns t r rise time - 10 - ns t d(off) turn-off delay - 27 - ns t f fall time - 8 - ns t off turn-off time - - 45 ns v sd source-to-drain diode voltage i sd = 65a, v gs = 0v - - 1.25 v i sd = 32.5a, v gs = 0v - - 1.2 v t rr reverse-recovery time i f = 65a, di sd /dt = 100a/ s v dd = 32v -6180ns q rr reverse-recovery charge - 58 76 nc
fdms9409_f085 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 typical characteristics figure 1. normalized power dissipation vs. case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs. case temperature 25 50 75 100 125 150 175 200 0 30 60 90 120 150 current limited by silicon current limited by package v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdms9409_f085 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 figure 5. 0.1 1 10 100 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area 0.001 0.01 0.1 1 10 100 1000 1 10 100 500 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2345678 0 50 100 150 200 250 300 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 300 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012345 0 50 100 150 200 250 300 5v v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 p s pulse width t j = 25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 012345 0 50 100 150 200 250 300 5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6v 5.5v 5v bottom 80 p s pulse width t j = 175 o c saturation characteristics typical characteristics
fdms9409_f085 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 figure 11. 345678910 0 10 20 30 40 50 i d = 65a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c r dson vs. gate voltage figure 12. normalized r dson vs. junction temperature -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 p s duty cycle = 0.5% max i d = 65a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs. temperature figure 14. -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 i d = 5ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs. junction temperature figure 15. 0.1 1 10 100 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs. drain to source voltage figure 16. 0 1020304050 0 2 4 6 8 10 v dd = 20v v dd = 16v i d = 65a v dd = 24v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs. gate to source voltage typical characteristics
?2015 fairchild semiconductor corporation fdms9409_f085 rev. 1.0 www.fairchildsemi.com 6 fdms9409_f085 n-channel powertrench ? mosfet product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? 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